Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.

In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release process of NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio of GeSi to Si layer was achieved for GeSi/Si stacks samples with different GeSi thickness (5 nm, 10 nm, and 20 nm) or annealing temperatures (≤900 °C). Furthermore, the influence of ground-plane (GP) doping in Si sub-fin region to improve electrical characteristics of devices was carefully investigated by experiment and simulations. The subthreshold characteristics of n-type devices were greatly improved with the increase of GP doping doses. However, the p-type devices initially were improved and then deteriorated with the increase of GP doping doses, and they demonstrated the best electrical characteristics with the GP doping concentrations of about 1 × 1018 cm-3, which was also confirmed by technical computer aided design (TCAD) simulation results. Finally, 4 stacked GAA Si NS channels with 6 nm in thickness and 30 nm in width were firstly fabricated on bulk substrate, and the performance of the stacked GAA Si NS devices achieved a larger ION/IOFF ratio (3.15 × 105) and smaller values of Subthreshold swings (SSs) (71.2 (N)/78.7 (P) mV/dec) and drain-induced barrier lowering (DIBLs) (9 (N)/22 (P) mV/V) by the optimization of suppression of parasitic channels and device's structure.

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

Medium optimization for high yield production of human serum albumin in Pichia pastoris and its efficient purification.

OBJECTIVE: To improve the yield of recombinant human serum albumin (HSA) in Pichia pastoris by medium optimization and establish the related purification scheme. RESULTS: A simplified version of the generally used buffered glycerol complex medium (BMGY), which contained yeast extract, glycerol and potassium salts, was found to be applicable. By decreasing the salt concentration of basal salt medium (BSM) to half of the original formula further, we achieved a high yield of 17.47 g/L HSA in the supernatant within a 192 h induction, which is the highest rHSA yield ever reported as far as we know. Accompanied with a three-step purification procedure which recovered two thirds of the desired protein at high purity, our work lays a solid foundation for large-scale industrial production of HSA. CONCLUSION: Medium optimization plays a significant role in improving the yield of desired protein, lowering the production cost and helping to explore the producing strain's character.